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| FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management functions. Features * 180 volts forward blocking Applications * * * * Voice over internet protocol (VOIC) MOSFET gate drivers Power switches Motor control Ordering information Device FCX555TA Reel size 7" Tape width 12mm embossed Quantity per reel 1,000 Pin out - top view Device marking 555 Issue 1 - November 2005 (c) Zetex Semiconductors plc 2005 1 www.zetex.com FCX555 Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Peak pulse current Power dissipation at TA =25C(a) Linear derating factor Power dissipation at TA =25C(b) Linear derating factor Operating and storage temperature range Symbol VCBO VCEV VEBO IC ICM PD PD Tj:Tstg Limit -180 -180 -7 -0.7 -2 1.5 12 2.1 16.8 -55 to +150 Unit V V V A A W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Symbol RJA Value 83 Unit C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - November 2005 (c) Zetex Semiconductors plc 2005 2 www.zetex.com FCX555 Electrical characteristics Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Symbol BVCBO BVCEV BVCER BVEBO BVCEO ICBO Min. -180 -180 Typ. Max. Unit V V Conditions IC = -100A IC = -1A, -0.3V < VBE < 1V IC = -1A, RB 1k IE= -100A IC =-10mA(*) VCB = -144V VCB = -144V, TAMB = 100C VEB = -6V IC = -0.1A, IB = -10mA(*) IC = -0.25A, IB = -25mA(*) IC =-250mA, IB =-25mA(*) IC =-250mA, VCE =-5V(*) IC = -10mA, VCE = -5V(*) 300 100 MHz IC = -100mA, VCE = -5V(*) Ic = -50mA, VCE = -10V, f = 100MHZ VCB 1= -10V, f = 1MHZ(*) -180 -7 -150 <1 -20 -10 -8.1 V V V nA A nA mV mV mV mV Emitter cut-off current Collector emitter saturation voltage IEBO VCE(SAT) <1 -20 -300 -400 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio Transition frequency VBE(SAT) VBE(ON) hFE 100 100 fT COBO -1000 -950 Output capacitance 10 pF NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. Issue 1 - November 2005 (c) Zetex Semiconductors plc 2005 3 www.zetex.com FCX555 Typical characteristics 5 ZTX 54/ 55-2 IB1=IB2=IC/10 tf ns 1000 800 -0.8 IC/IB=10 tr ts ns s 500 5 4 3 2 td 100 1 0 -0.01 tr -0.1 -1 200 0 50 0 tf ts VCE(sat) - (Volts) -0.6 Switching time 400 300 200 -0.4 600 td ns 400 100 -0.2 0 -0.0001 -0.001 -0.01 -0.1 -1 0 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 100 -1.4 hFE - Normalised Gain (%) 80 -1.2 IC/IB=10 60 40 VBE(sat) - (Volts) VCE=-10V -1.0 -0.8 20 0 -0.6 -0.0001 -0.001 -0.01 -0.1 1 -0.0001 -0.001 -0.01 -0.1 -1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -1.4 -1.2 VCE=-10V VBE - (Volts) -1.0 -0.8 -0.6 -0.0001 -0.001 -0.01 -0.1 -1 IC - Collector Current (Amps) VBE(on) v IC Issue 1 - November 2005 (c) Zetex Semiconductors plc 2005 4 www.zetex.com FCX555 Intentionally left blank Issue 1 - November 2005 (c) Zetex Semiconductors plc 2005 5 www.zetex.com FCX555 SOT89 Packaging details D D1 C A H E E1 L B B1 e e1 DIM A B B1 C D E Millimeters Min 1.40 0.44 0.36 0.35 4.40 2.29 Max 1.60 0.56 0.48 0.44 4.60 2.60 Inches Min 0.550 0.017 0.014 0.014 0.173 0.090 Max 0.630 0.022 0.019 0.019 0.181 0.102 DIM E1 e e1 H L Millimeters Min 2.13 Max 2.29 Inches Min 0.084 Max 0.090 1.50 BSC 3.00 BSC 3.94 0.89 4.25 1.20 - 0.059 BSC 0.118 BSC 0.155 0.155 0.167 0.167 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - November 2005 (c) Zetex Semiconductors plc 2005 6 www.zetex.com |
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